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onsemi FDS86540

MOSFET, N-CH, 60V, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Curren

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
4.9 mm
Width
3.9 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
18 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
3.7 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
7.1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.41 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
5 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
4.5 mΩ
Rise Time
15 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
33 ns
Turn-On Delay Time
28 ns

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