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onsemi FDS86267P
产品详情
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Compliance
RoHS
Compliant
Dimensions
Height
1.75 mm
Physical
Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
-2.2 A
Drain to Source Breakdown Voltage
-150 V
Drain to Source Resistance
191 mΩ
Drain to Source Voltage (Vdss)
191 mΩ
Element Configuration
Single
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.13 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
2.5 W
Rds On Max
255 mΩ
Turn-Off Delay Time
17 ns
Turn-On Delay Time
9.7 ns