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onsemi FDS86252

FDS86252 Series 150 V 4.5 A 55 mOhm N-Channel PowerTrench MOSFET - SOIC-8

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
4 mm
Width
5 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.5 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
45 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
955 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
5 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.4 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
55 mΩ
Rise Time
1.6 ns
Threshold Voltage
3.4 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
9.2 ns

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