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onsemi FDS86242
产品详情
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Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
67 mΩ
Dimensions
Height
1.5 mm
Length
4 mm
Width
5 mm
Physical
Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
IBS
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
4.1 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
56.3 mΩ
Drain to Source Voltage (Vdss)
56.3 mΩ
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
3.5 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
67 mΩ
Rise Time
10 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
7.9 ns