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onsemi FDS86141

N-Channel Power Trench MOSFET 100V, 7A, 23m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
4 mm
Width
5 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
100 V
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
3.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
934 pF
Max Operating Temperature
150 °C
Max Power Dissipation
5 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.1 V
Number of Elements
1
Power Dissipation
5 W
Rds On Max
23 mΩ
Rise Time
3.2 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
14.3 ns
Turn-On Delay Time
8.3 ns

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