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onsemi FDS86140

N-Channel PowerTrench MOSFET 100V, 11.2A, 9.8m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
4 mm
Width
5 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11.2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
8.1 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
4.8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.58 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
5 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.7 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
9.8 mΩ
Rise Time
5.6 ns
Threshold Voltage
2.7 V
Turn-Off Delay Time
23 ns
Turn-On Delay Time
13.7 ns

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