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onsemi FDS6900AS

Transistor MOSFET Array Dual N-CH 30V 8.2A/6.9A 8-Pin SOIC T/R

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
27 MΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
3.99 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
8.2 A
Current Rating
8.2 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
22 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Dual
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
600 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Elements
2
Power Dissipation
2 W
Rds On Max
27 mΩ
Resistance
27 MΩ
Rise Time
27 mΩ
Termination
4 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
IBS
Voltage Rating (DC)
30 V

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