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onsemi FDS6898AZ-F085
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Compliance
Lead Free
Lead Free
Radiation Hardening
No
RoHS
14 mΩ
Dimensions
Height
1.75 mm
Physical
Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
Compliant
Supply Chain
Lifecycle Status
Obsolete
Technical
Continuous Drain Current (ID)
9.4 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
10 mΩ
Drain to Source Voltage (Vdss)
10 mΩ
Element Configuration
Dual
Fall Time
16 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.821 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
900 mW
Rds On Max
14 mΩ
Rise Time
15 ns
Turn-Off Delay Time
34 ns
Turn-On Delay Time
10 ns