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onsemi FDS6898A

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 20V, 9.4A, 14m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
9.4 A
Current Rating
9.4 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
14 mΩ
Drain to Source Voltage (Vdss)
20 V
Dual Supply Voltage
20 V
Element Configuration
Dual
Fall Time
16 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.821 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Nominal Vgs
1 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
14 mΩ
Resistance
14 MΩ
Rise Time
15 ns
Termination
SMD/SMT
Threshold Voltage
500 mV
Turn-Off Delay Time
34 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
20 V

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