跳转到主要内容

onsemi FDS6892A

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 20V, 7.5A, 18m

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
18 MΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
7.5 A
Current Rating
7.5 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
18 mΩ
Dual Supply Voltage
20 V
Element Configuration
Dual
Fall Time
9 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
900 mV
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
18 mΩ
Resistance
18 MΩ
Rise Time
18 mΩ
Termination
15 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
26 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
20 V

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us