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onsemi FDS6890A

Dual N-Channel PowerTrench MOSFET, 2.5V Specified, 20V, 7.5A, 18m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7.5 A
Current Rating
7.5 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
13 mΩ
Drain to Source Voltage (Vdss)
20 V
Dual Supply Voltage
20 V
Element Configuration
Dual
Fall Time
23 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
2.13 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Nominal Vgs
800 mV
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
18 mΩ
Resistance
180 mΩ
Rise Time
26 ns
Termination
SMD/SMT
Threshold Voltage
800 mV
Turn-Off Delay Time
65 ns
Turn-On Delay Time
13 ns
Voltage Rating (DC)
20 V

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