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onsemi FDS6681Z
产品详情
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Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
4.6 MΩ
Dimensions
Height
1.5 mm
Length
5 mm
Width
4 mm
Physical
Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
130 mg
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
20 A
Current Rating
-20 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
3.8 mΩ
Drain to Source Voltage (Vdss)
3.8 mΩ
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
380 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.8 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
4.6 mΩ
Resistance
4.6 MΩ
Rise Time
4.6 mΩ
Termination
9 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
660 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
-30 V