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onsemi FDS6680A
产品详情
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Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
28 ns
Dimensions
Height
1.5 mm
Length
5 mm
Width
4 mm
Physical
Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
130 mg
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
12.5 A
Current Rating
12.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
9.5 mΩ
Drain to Source Voltage (Vdss)
9.5 mΩ
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
9.5 mΩ
Recovery Time
9.5 mΩ
Resistance
9.5 MΩ
Rise Time
9.5 MΩ
Termination
5 ns
Threshold Voltage
2 V
Turn-Off Delay Time
27 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
30 V