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onsemi FDS6675BZ

P-Channel 30 V 21.8 mOhm 2.5 W Power Trench Mosfet - SOIC-8

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
10.8 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
60 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
2.47 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
-2 V
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
13 mΩ
Resistance
21.8 MΩ
Rise Time
7.8 ns
Termination
SMD/SMT
Threshold Voltage
-2 V
Turn-Off Delay Time
120 ns
Turn-On Delay Time
3 ns

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