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onsemi FDS6675

P-Channel PowerTrench MOSFET, Logic Level, -30V, -11A, 14m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
14 mΩ

Dimensions

Height
1.75 mm

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
11:00 AM
Current Rating
11 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
14 mΩ
Drain to Source Voltage (Vdss)
14 mΩ
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
100 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.7 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
14 mΩ
Resistance
14 mΩ
Rise Time
14 mΩ
Termination
16 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
50 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
-30 V

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