跳转到主要内容

onsemi FDS6673BZ

P-Channel 30 V 7.8 mOhm PowerTrench Mosfet - SOIC-8

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-14.5 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
6.5 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
105 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
4.7 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
7.8 mΩ
Resistance
7.8 MΩ
Rise Time
16 ns
Threshold Voltage
-1.9 V
Turn-Off Delay Time
225 ns
Turn-On Delay Time
14 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us