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onsemi FDS6670A

N-Channel PowerTrench MOSFET, Logic Level, 30V, 13A, 8m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
8 mΩ
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
5 mm
Width
11 ns

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
13 A
Current Rating
13 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
8 mΩ
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.8 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
8 mΩ
Resistance
No SVHC
Rise Time
13 ns
Termination
SMD/SMT
Threshold Voltage
1.8 V
Turn-Off Delay Time
40 ns
Turn-On Delay Time
15 ns
Voltage Rating (DC)
30 V

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