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onsemi FDS6612A

N-Channel Power Trench MOSFET, Logic Level, 30V, 8.4A, 22m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
8.4 A
Current Rating
8.4 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
560 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
22 mΩ
Resistance
22 MΩ
Rise Time
5 ns
Termination
SMD/SMT
Threshold Voltage
1.9 V
Turn-Off Delay Time
22 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
30 V

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