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onsemi FDS4935BZ

Transistor MOSFET Array Dual P-CH 30V 6.9A 8-Pin SOIC T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-6.9 A
Current Rating
-6.9 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Dual
Fall Time
13 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.36 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.9 V
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
22 mΩ
Resistance
22 MΩ
Rise Time
13 ns
Termination
SMD/SMT
Threshold Voltage
-1.9 V
Turn-Off Delay Time
68 ns
Turn-On Delay Time
12 ns
Voltage Rating (DC)
-30 V

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