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onsemi FDS4685

P-Channel PowerTrench MOSFET, 40V, -8.2A, 27m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
27 MΩ

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-8.2 A
Current Rating
-8.2 A
Drain to Source Breakdown Voltage
-40 V
Drain to Source Resistance
22 mΩ
Drain to Source Voltage (Vdss)
22 mΩ
Element Configuration
Single
Fall Time
18 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
27 mΩ
Resistance
27 MΩ
Rise Time
27 mΩ
Threshold Voltage
11 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns
Voltage Rating (DC)
IBS

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