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onsemi FDS4435BZ
产品详情
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Compliance
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
Dimensions
Height
1.75 mm
Length
5 mm
Width
4 mm
Physical
Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg
Supply Chain
Lifecycle Status
Production
Technical
Continuous Drain Current (ID)
-8.8 A
Current Rating
-8.8 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
-30 V
Element Configuration
Single
Fall Time
38 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.845 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
-2.1 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
20 mΩ
Resistance
20 MΩ
Rise Time
13 ns
Threshold Voltage
-2.1 V
Turn-Off Delay Time
30 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
-30 V