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onsemi FDS3580

N-Channel PowerTrench MOSFET 80V, 7.6A, 29m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
29 mΩ

Dimensions

Height
1.575 mm
Length
4.9 mm
Width
3.9 mm

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7.6 A
Current Rating
7.6 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
22 mΩ
Drain to Source Voltage (Vdss)
22 mΩ
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.535 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
4.5 mΩ
Resistance
29 mΩ
Rise Time
4.5 mΩ
Turn-Off Delay Time
34 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
Compliant

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