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onsemi FDS2672-F085

Trans MOSFET N-CH 200V 3.9A Automotive 8-Pin SOIC T/R

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.75 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
230.4 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
3.9 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
59 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.535 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Cut Tape (CT)
Power Dissipation
2.5 W
Rds On Max
70 mΩ
Rise Time
10 ns
Turn-Off Delay Time
35 ns
Turn-On Delay Time
22 ns

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