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onsemi FDS2672

N-Channel UltraFET Trench MOSFET 200V, 3.9A, 70m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.9 A
Current Rating
3.9 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
59 mΩ
Drain to Source Voltage (Vdss)
200 V
Dual Supply Voltage
200 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.535 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.9 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
70 mΩ
Resistance
70 mΩ
Rise Time
10 ns
Termination
SMD/SMT
Threshold Voltage
2.9 V
Turn-Off Delay Time
35 ns
Turn-On Delay Time
22 ns
Voltage Rating (DC)
200 V

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