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onsemi FDS2572

N-Channel UltraFET Trench MOSFET 150V, 4.9A, 47m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
130 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.9 A
Current Rating
4.9 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
40 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
22 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.05 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.5 W
Rds On Max
47 mΩ
Resistance
47 mΩ
Rise Time
4 ns
Threshold Voltage
4 V
Turn-Off Delay Time
44 ns
Turn-On Delay Time
14 ns
Voltage Rating (DC)
150 V

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