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onsemi FDPF12N50T

N-Channel Power MOSFET, UniFETTM, 500 V, 11.5 A, 650 m, TO-220F

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Compliance

Radiation Hardening
No
RoHS
650 mΩ

Physical

Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3
Weight
2.27 g

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
11.5 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
550 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
30 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.315 nF
Max Operating Temperature
150 °C
Max Power Dissipation
42 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
165 W
Rds On Max
650 mΩ
Rise Time
50 ns
Turn-Off Delay Time
45 ns
Turn-On Delay Time
IBS

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