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onsemi FDP61N20

N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.4 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
61 A
Current
61 A
Current Rating
61 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
34 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
170 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.38 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
417 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
417 W
Rds On Max
41 mΩ
Resistance
41 MΩ
Rise Time
215 ns
Threshold Voltage
5 V
Turn-Off Delay Time
125 ns
Turn-On Delay Time
40 ns
Voltage
200 V
Voltage Rating (DC)
200 V

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