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onsemi FDP52N20

N-Channel Power MOSFET, UniFETTM, 200V, 52A, 49m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
49 MΩ

Dimensions

Height
9.4 mm
Length
10.1 mm
Width
4.7 mm

Physical

Case/Package
TO-220AB
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
52 A
Current Rating
52 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
41 mΩ
Drain to Source Voltage (Vdss)
41 mΩ
Element Configuration
Single
Fall Time
29 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
20.4 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
357 W
Rds On Max
49 mΩ
Resistance
49 MΩ
Rise Time
49 mΩ
Threshold Voltage
175 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
53 ns
Voltage Rating (DC)
IBS

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