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onsemi FDP39N20

N-Channel Power MOSFET, UniFETTM, 200 V, 39 A, 66 m, TO-220

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
TO-220
Mount
Through Hole
Weight
1.8 g

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
39 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
66 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
150 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.13 nF
Max Operating Temperature
150 °C
Max Power Dissipation
251 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
251 W
Rds On Max
66 mΩ
Rise Time
160 ns
Turn-Off Delay Time
150 ns
Turn-On Delay Time
30 ns

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