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onsemi FDP18N50

N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
265 MΩ

Dimensions

Height
9.4 mm
Length
10.1 mm
Width
4.7 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
18 A
Current
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
265 mΩ
Drain to Source Voltage (Vdss)
265 mΩ
Element Configuration
Single
Fall Time
90 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
20.4 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
235 W
Rds On Max
265 mΩ
Resistance
265 MΩ
Rise Time
265 mΩ
Threshold Voltage
165 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
55 ns
Voltage
IBS
Voltage Rating (DC)
500 V

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