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onsemi FDP12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 m, TO-220

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
650 mΩ

Dimensions

Height
16.51 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-220
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
12:00 AM
Drain to Source Breakdown Voltage
12 A
Drain to Source Resistance
530 mΩ
Drain to Source Voltage (Vdss)
530 mΩ
Element Configuration
Single
Fall Time
60 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.676 nF
Max Operating Temperature
OBSOLETE
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
240 W
Rds On Max
650 mΩ
Rise Time
50 ns
Threshold Voltage
3 V
Turn-Off Delay Time
80 ns
Turn-On Delay Time
Compliant

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