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onsemi FDP12N50NZ

N-Channel Power MOSFET, UniFETTM II, 500 V, 11.5 A, 520 m, TO-220

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Compliance

Radiation Hardening
No
RoHS
520 mΩ

Dimensions

Height
16.07 mm
Length
10.36 mm
Width
IBS

Physical

Case/Package
TO-220
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
11.5 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
460 mΩ
Drain to Source Voltage (Vdss)
460 mΩ
Element Configuration
Single
Fall Time
45 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.235 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
170 W
Rds On Max
520 mΩ
Rise Time
50 ns
Turn-Off Delay Time
60 ns
Turn-On Delay Time
20 ns

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