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onsemi FDP047N10

N-Channel Power MOSFET, QFET, 100 V, 164 A, 4.7 m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
4.7 MΩ

Dimensions

Height
15.38 mm
Length
10.1 mm
Width
4.7 mm

Physical

Case/Package
TO-220
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.9 mΩ
Drain to Source Voltage (Vdss)
3.9 mΩ
Element Configuration
Single
Fall Time
244 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
20.4 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
375 W
Rds On Max
4.7 mΩ
Resistance
4.7 MΩ
Rise Time
4.7 mΩ
Threshold Voltage
386 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
174 ns

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