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onsemi FDN8601

MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity: N Channel; Continuous Drai

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
109 mΩ

Dimensions

Height
940 µm
Length
1.4 mm
Width
2.92 mm

Physical

Case/Package
SOT-23-3
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
85.4 mΩ
Drain to Source Voltage (Vdss)
85.4 mΩ
Element Configuration
Single
Fall Time
3.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.12 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
1.5 W
Rds On Max
109 mΩ
Rise Time
1.3 ns
Threshold Voltage
3 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
4.3 ns

合规性文件

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