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onsemi FDN5618P

P-Channel PowerTrench MOSFET, 60V, -1.25A, 170m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.22 mm
Length
2.92 mm
Width
1.4 mm

Physical

Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
1.25 A
Current Rating
-1.25 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
170 mΩ
Drain to Source Voltage (Vdss)
-60 V
Dual Supply Voltage
-60 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
430 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
20 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
170 mΩ
Resistance
170 mΩ
Rise Time
8 ns
Termination
SMD/SMT
Threshold Voltage
-1.6 V
Turn-Off Delay Time
16.5 ns
Turn-On Delay Time
6.5 ns
Voltage Rating (DC)
-60 V

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