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onsemi FDN537N

N-Channel Power Trench MOSFET 30V, 6.5A, 23m

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Compliance

Radiation Hardening
No
RoHS
23 mΩ

Dimensions

Height
940 µm
Length
2.92 mm
Width
IBS

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
19 mΩ
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.12 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel
Power Dissipation
600 mW
Rds On Max
23 mΩ
Rise Time
10 ns
Turn-Off Delay Time
11 ns
Turn-On Delay Time
Compliant

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