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onsemi FDN338P

P-Channel PowerTrench MOSFET, 2.5V Specified, -20V, -1.6A, 115m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
115 mΩ

Dimensions

Height
1.22 mm
Width
3.05 mm

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
1.6 A
Current Rating
-1.6 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
88 mΩ
Drain to Source Voltage (Vdss)
88 mΩ
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
451 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-800 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
115 mΩ
Resistance
115 mΩ
Rise Time
115 mΩ
Threshold Voltage
-800 mV
Turn-Off Delay Time
11 ns
Turn-On Delay Time
Compliant
Voltage Rating (DC)
IBS

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