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onsemi FDN302P

P-Channel PowerTrench MOSFET, 2.5V Specified, -20V, -2.4A, 55m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.12 mm
Length
2.92 mm
Width
1.4 mm

Physical

Case/Package
TO-236-3
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-2.4 A
Current Rating
-2.4 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
55 mΩ
Drain to Source Voltage (Vdss)
-20 V
Dual Supply Voltage
-20 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
882 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
20 V
Min Operating Temperature
-55 °C
Nominal Vgs
-1 V
Number of Channels
1
Number of Elements
1
Power Dissipation
500 mW
Rds On Max
55 mΩ
Resistance
55 mΩ
Rise Time
11 ns
Termination
SMD/SMT
Threshold Voltage
-1 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
13 ns
Voltage Rating (DC)
-20 V

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