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onsemi FDMS86310

Trans Mosfet N-ch Si 80V 17A 8-PIN Pqfn Ep T/r / Mosfet N-ch 80V 17A 8-PQFN

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.05 mm
Length
5.1 mm
Width
5.85 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
68.1 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
6.7 mΩ
Drain to Source Voltage (Vdss)
3.8 mΩ
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
96 W
Rds On Max
2.5 W
Rise Time
23 ns
Turn-Off Delay Time
4.8 mΩ
Turn-On Delay Time
28 ns

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