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onsemi FDMS86252L

N-Channel Shielded Gate PowerTrench® MOSFET 150V, 12A, 56mΩ

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Compliance

RoHS
56 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
8
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
N
Drain to Source Breakdown Voltage
4.4 A
Drain to Source Resistance
46 mΩ
Drain to Source Voltage (Vdss)
46 mΩ
Element Configuration
150 V
Fall Time
2.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
N
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
2.5 W
Number of Channels
-55 °C
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
56 mΩ
Rise Time
1.4 ns
Turn-Off Delay Time
19 ns
Turn-On Delay Time
Compliant

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