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onsemi FDMS86252

N-Channel Shielded Gate PowerTrench MOSFET 150V, 16A, 51m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.15 mm
Length
5 mm
Width
6 mm

Physical

Case/Package
QFN EP
Mount
Surface Mount
Number of Pins
8
Weight
74 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.6 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
43.9 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
3.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
905 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
69 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
51 mΩ
Rise Time
2.3 ns
Threshold Voltage
2.8 V
Turn-Off Delay Time
15 ns
Turn-On Delay Time
7.7 ns

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