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onsemi FDMS8622

N-Channel Power Trench MOSFET 100V, 16.5A, 56m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
5 mm
Width
6 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
74 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.8 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
45 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
2.1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
400 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
56 mΩ
Rise Time
1.7 ns
Turn-Off Delay Time
10.2 ns
Turn-On Delay Time
5.7 ns

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