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onsemi FDMS86202

N-Channel Shielded Gate PowerTrench MOSFET 120V, 64A, 7.2m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
5.1 mm
Width
6.25 mm

Physical

Mount
Surface Mount
Number of Pins
8
Weight
56.5 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
13.5 A
Drain to Source Breakdown Voltage
120 V
Drain to Source Resistance
6 mΩ
Drain to Source Voltage (Vdss)
120 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.25 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
156 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel
Power Dissipation
2.7 W
Rds On Max
7.2 mΩ
Rise Time
6 ns
Turn-Off Delay Time
27 ns
Turn-On Delay Time
21 ns

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