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onsemi FDMS86201

N-Channel Shielded Gate PowerTrench MOSFET 120V, 49A, 11.5m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
14.5 MΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11.6 A
Drain to Source Breakdown Voltage
120 V
Drain to Source Resistance
9.6 mΩ
Drain to Source Voltage (Vdss)
9.6 mΩ
Element Configuration
Single
Fall Time
7.1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2.6 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
2.5 W
Rds On Max
11.5 mΩ
Resistance
14.5 MΩ
Rise Time
11.5 mΩ
Threshold Voltage
7.7 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
13 ns

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