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onsemi FDMS86200

Fairchild FDMS86200 N-channel MOSFET Transistor; 52 A; 150 V; 8-Pin Power 56

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
68.1 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
9.6 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
5.8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.715 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
104 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
18 mΩ
Resistance
21 MΩ
Rise Time
7.9 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
27 ns
Turn-On Delay Time
13 ns

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