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onsemi FDMS86150ET100

N-Channel Shielded Gate PowerTrench MOSFET 100V, 128A, 4.85m

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Compliance

Lead Free
Lead Free
RoHS
4.85 mΩ

Dimensions

Height
1.1 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
56.5 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.9 mΩ
Drain to Source Voltage (Vdss)
3.9 mΩ
Element Configuration
Single
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.065 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
3.3 W
Rds On Max
4.85 mΩ
Rise Time
8.3 ns
Turn-Off Delay Time
28 ns
Turn-On Delay Time
Compliant

合规性文件

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