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onsemi FDMS86105

N-Channel Shielded Gate PowerTrench MOSFET 100V, 26A, 34m

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
34 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6:00 AM
Drain to Source Breakdown Voltage
6 A
Drain to Source Resistance
27 mΩ
Drain to Source Voltage (Vdss)
27 mΩ
Element Configuration
Single
Fall Time
2.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
34 mΩ
Rise Time
2.1 ns
Threshold Voltage
2.8 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
6.7 ns

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