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onsemi FDMS86104

N-Channel Shielded Gate PowerTrench MOSFET 100V, 16A, 24m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
24 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Mount
-55 °C
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7:00 AM
Current
7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
20 mΩ
Element Configuration
Single
Fall Time
3.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
923 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
24 mΩ
Rise Time
3.5 ns
Threshold Voltage
2.9 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
8 ns
Voltage
IBS

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