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onsemi FDMS86101A

MOSFET, N-CH, 100V, 8PQFN; Transistor Polarity: N Channel; Continuous Drain Curre

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
8 mΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
5.85 mm

Physical

Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
13 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
6.3 mΩ
Drain to Source Voltage (Vdss)
6.3 mΩ
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
8 mΩ
Rise Time
5.4 ns
Threshold Voltage
3.1 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
19 ns

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