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onsemi FDMS8460

N-Channel Power Trench MOSFET 40V, 49A, 2.2m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
2.2 MΩ

Dimensions

Height
1.05 mm
Length
5 mm
Width
6 mm

Physical

Contact Plating
Tin
Mount
-55 °C
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
25 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
2 mΩ
Drain to Source Voltage (Vdss)
2 mΩ
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
2.2 mΩ
Resistance
2.2 MΩ
Rise Time
2.2 mΩ
Threshold Voltage
9 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
19 ns
Voltage
IBS

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